symbol 10 sec steady state v ds v gs -2 -1.9 -1.7 -1.6 i dm 0.63 0.57 0.4 0.36 t j , t stg symbol typ max t 10s 160 200 steady-state 180 220 steady-state r jl 130 160 absolute maximum ratings t a =25c unless otherwise noted parameter units v gate-source voltage v r ja -20 8 -55 to 150 i d drain-source voltage t a =25c a t a =70c pulsed drain current b continuous drain current a t a =25c -20 w t a =70c junction and storage temperature range c power dissipation a p d maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w parameter maximum junction-to-ambient a c/w features v ds (v) = -20v i d = -2 a (v gs = -4.5v) r ds(on) < 80m ? (v gs = -4.5v) r ds(on) < 100m ? (v gs = -2.5v) r ds(on) < 125m ? (v gs = -1.8v) r ds(on) < 150m ? (v gs = -1.5v) the AO7417/l uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.5v, in the small sot363 footprint. this device is suitable for use in buck convertor. a o7417 and AO7417l are electrically identical. -rohs compliant -AO7417l is halogen free g d s sc-70-6 (sot-363) to p view g d d s d d 1 2 3 6 5 4 AO7417 p-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.5 -0.65 -1 v i d(on) -20 a 65 80 t j =125c 90 110 80 100 m ? 100 125 m ? 115 150 m ? g fs 10 s v sd -0.7 -1 v i s -1 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23 ? q g 8.5 11 nc q gs 1.2 nc q gd 2.1 nc t d(on) 7.2 ns t r 36 ns t d(off) 53 ns t f 56 ns t rr 37 49 ns q rr 27 nc v gs =-4.5v, v ds =-5v on state drain current body diode reverse recovery time i f =-2a, di/dt=100a/ s gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-2a gate source charge body diode reverse recovery charge i f =-2a, di/dt=100a/ s turn-on delaytime v gs =-4.5v, v ds =-10v, r l =5 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time gate drain charge maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-10v, f=1mhz output capacitance reverse transfer capacitance forward transconductance v ds =-5v, i d =-2a diode forward voltage i s =-1a,v gs =0v r ds(on) static drain-source on-resistance v gs =-4.5v, i d =-2a m ? v gs =-2.5v, i d =-1.8a v gs =-1.8v, i d =-1.5a v gs =-1.5v, i d =-0.5a gate threshold voltage v ds =v gs i d =-250 a a gate-body leakage current v ds =0v, v gs =8v drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-20v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters a : the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 300 s pulse width, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev0: may 2008 AO7417 p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristic s v gs =4.5v, i d =1.8a v gs =2.5v, i d =1.7a v gs =1.8v, i d =1a v gs =1.5v, i d =1a 60 70 80 90 100 110 120 130 140 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-4.5v v gs =-1.8v v gs =-1.5v 0.9 1 1.1 1.2 1.3 1.4 1.5 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-1.5v i d =-0.5a v gs =-4.5v i d =-2a v gs =-1.8v i d =-1.5a 50 80 110 140 170 200 12345678 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-2a 25c 125c v gs =-2.5v 0 4 8 12 16 20 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2v -2.5v -4.5v -3v 0 2 4 6 8 10 12 0.5 1 1.5 2 2.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 125c 25c 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c AO7417 p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s v gs =4.5v, i d =1.8a v gs =2.5v, i d =1.7a v gs =1.8v, i d =1a v gs =1.5v, i d =1a 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0.0 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 10ms 1ms 1s dc r ds(on) limited t j(max) =150c t a =25c 100ms 100 s 10 s 10s v ds =10v i d =2.2a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =220c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c t on t p d t on p d 0 1 2 3 4 5 0246810 q g (nc) figure 7: gate-charge characteristics -v gs (volts) v ds =-4.5v i d =-2a 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rs s AO7417 p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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